| PART |
Description |
Maker |
| PD46185092BF1-E40-EQ1 PD46185182BF1-E40-EQ1 PD4618 |
18M-BIT QDRTM II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| CY7C1314BV18-167BZXC |
18-Mbit QDRII SRAM 2 Word Burst Architecture 512K X 36 QDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1141V18 CY7C1145V18 CY7C1156V18 CY7C1143V18 CY |
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
|
| R1QKA3618CB R1QKA3636CB R1QEA3636CB R1QEA3618CB R1 |
36-Mbit QDRII SRAM 4-word Burst
|
Renesas Electronics Corporation
|
| IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM
1.8V 512K x 36 QDR II PipeLined SRAM
Storage, Cases
Tools, Applicator RoHS Compliant: NA
Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA
SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA
18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
IDT
http://
Integrated Device Technology, Inc.
|
| CYPT1542AV18-250GCMB CYPT1544AV18-250GCMB CYRS1542 |
72-Mbit QDRII SRAM Two-Word Burst Architecture with RadStop™ Technology
|
Cypress
|
| CY7C1243KV18-400BZC CY7C1243KV18-450BZC CY7C1245KV |
36-Mbit QDRII SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress
|
| CY7C1143KV18-450BZC CY7C1145KV18-400BZXI CY7C1145K |
18-Mbit QDRII SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress
|
| CY7C2163KV18-450BZXI CY7C2163KV18-550BZXI CY7C2165 |
18-Mbit QDRII SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
|
Cypress
|
| CY7C2263XV18-633BZXC CY7C2263XV18-600BZXC CY7C2265 |
36-Mbit QDRII Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
|
Cypress
|
| CY7C2262XV18 CY7C2264XV18 CY7C2262XV18-366BZXC |
36-Mbit QDRII Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
36-Mbit QDR? II Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
|
Cypress Semiconductor
|
| M5M4V16169DTP-10 M5M4V16169DTP-7 M5M4V16169DTP-8 M |
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
